CORRELATION OF SHORT-RANGE ORDER AND SPUTTER DOSE IN GAAS(110) USING A VIDICON-BASED LEED SYSTEM

被引：46

作者：

WELKIE, DG ^{[1
]}

LAGALLY, MG ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR MAT SCI,MADISON,WI 53706

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 02期

关键词：

D O I：

10.1116/1.570086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The change in short-range order with sputter dose and annealing of a GaAs (110) surface is followed by measuring the angular profiles of diffraction spots in low-energy electron diffraction from the surface. In particular, step densities and the step height are determined. Evidence for structural damage beyond the creation of steps can be interpreted in terms of coherent domains of limited size.

引用

页码：784 / 788

页数：5

共 18 条

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