TIGHT-BINDING CALCULATION OF THE ELASTIC PROPERTIES OF COMPOUND SEMICONDUCTORS

被引:3
作者
CHAN, BC
ONG, CK
机构
关键词
compound semiconductor; elastic properties; Tight binding calculation;
D O I
10.1016/0022-3697(90)90117-X
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A scheme, proposed by Chadi and Martin (Solid St. Commun. 19, 643, 1976), using a special point method to calculate phonon frequencies and elastic moduli through the computation of the change of the total energy of a phonon/stress distorted lattice without introducing any additional parameters, is reviewed. Relevant formulas and sets of special points used for the calculation are presented in a readily implementable form. The scheme was used in calculating the phonon and elastic properties of a compound semiconductor. The results agree well with the experimental data. © 1990.
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页码:343 / 348
页数:6
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