NI, IN AND SB IMPLANTED PT AND V CATALYZED THIN-FILM SNO2 GAS SENSORS

Thin-film technologies lead to low cost and reliable microsystems combining electronics and sensors. However, in competition with microelectronic fabrication sensor technologies exhibit a lack of experience creating difficulties in microsystem integration. In this paper a simple implantation process is introduced to improve thin-film sensor performance. In, Ni and Sb-doped thin-film V and Pt catalysed SnO2 ps sensors are presented. The sensor response due to pulses of H-2, Co(x), NH3, NO2, CH, and C2H5OH is discussed in the temperature range between 100 and 400-degrees-C.