ELECTRICAL TRANSPORT-PROPERTIES OF THIN POLYCRYSTALLINE SNO2 FILM SENSORS

被引：41

作者：

DEMARNE, V ^{[1
]}

GRISEL, A ^{[1
]}

SANJINES, R ^{[1
]}

ROSENFELD, D ^{[1
]}

LEVY, F ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE,INST PHYS APPL,CH-1015 LAUSANNE,SWITZERLAND

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1992年 / 7卷 / 1-3期

关键词：

Charge Carrier Density - Hall Effect Measurements - Polycrystalline Tin Dioxide Films - Semiconducting Tin Dioxide - Semiconductor Gas Sensors - Thermal Activation;

D O I：

10.1016/0925-4005(92)80389-F

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Thin (10-400 nm) polycrystalline SnO2 film gas sensors are currently being fabricated and tested for several applications. Electrical conductivity, sigma, and Hall-effect measurements at high temperatures on chemically and structurally characterized films are particularly investigated in the present study. The correlation with the gas tests shows that the best sensitivity for H-2 is obtained in a thermal-activation regime of the carrier density. favoured by using films with small crystallites and low donor concentration. A sensitivity S = 200 is obtained at 100 ppm H-2.

引用

页码：704 / 708

页数：5

共 12 条

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