VIBRATIONAL MODES OF DEFECTS IN GAP

被引：28

作者：

SPITZER, WG

ALLRED, W

BLUM, SE

CHICOTKA, RJ

机构：

[1] Department of Materials Science and Electrical Engineering, University of Southern California, Los Angeles

[2] IBM Research Division, Yorktown Heights

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 06期

关键词：

D O I：

10.1063/1.1658037

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Localized vibrational modes of impurities in gallium phosphide are observed in infrared absorption. Tentative assignments for the observed absorption bands are as follows: ωL=453 cm-1 is due to Si Ga, 464 cm-1 to NP or OP 569 cm -1 to 11BGa, and 592 to 10B Ga. Other defect bands are observed at 443, 527, and 606 cm -1. However, present experimental results are not sufficient to permit identification of the impurities. © 1969 The American Institute of Physics.

引用

页码：2589 / &

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