OPTOELECTRONIC STUDIES ON REFINED ZNTE AND IMPLICATIONS FOR II-VI SEMICONDUCTORS

被引：31

作者：

DEAN, PJ

机构：

[1] RSRE, Great Malvern, Worcs. WR14 3PS, St Andrews Road

来源：

JOURNAL OF LUMINESCENCE | 1979年 / 18-9卷 / JAN期

关键词：

D O I：

10.1016/0022-2313(79)90230-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Studies of the edge photoluminescence of refined undoped and backdoped ZnTe show that long-standing attributions of certain persistent shallow acceptors in terms of doubly ionizable cation vacancy acceptors or donor-acceptor complexes are incorrect. Acceptor and donor excited states revealed from bound exciton luminescence satellites and from donor-acceptor pair luminescence excitation spectra provide accurate estimates of impurity and band parameters. © 1979.

引用

页码：755 / 761

页数：7

共 21 条

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[9] DEAN PM, UNPUBLISHED
[10] DEVLIN SS, 1967, PHYSICS CHEMISTRY II, pCH11

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