INTERACTION BETWEEN ARSENIC, HYDROGEN, AND SILICON MATRIX IN DOPING OF SPUTTERED AMORPHOUS HYDROGENATED SILICON

被引：7

作者：

TOULEMONDE, M ^{[1
]}

SIFFERT, P ^{[1
]}

DENEUVILLE, A ^{[1
]}

BRUYERE, JC ^{[1
]}

机构：

[1] CNRS,GROUPE TRANSIT PHASES,F-38042 GRENOBLE,FRANCE

来源：

关键词：

D O I：

10.1063/1.92643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：152 / 154

页数：3

共 12 条

[1] BRUYERE JC, 1980, J APPL PHYS, V51, P2199, DOI 10.1063/1.327895
[2] BRUYERE JC, 1980, J PHYS LETT-PARIS, V41, pL31, DOI 10.1051/jphyslet:0198000410203100
[3] Chu WK., 1978, BACKSCATTERING SPECT
[4] DIRECT MEASUREMENT OF THE BULK-DENSITY OF GAP STATES IN N-TYPE HYDROGENATED AMORPHOUS-SILICON
COHEN, JD
LANG, DV
HARBISON, JP
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (03) : 197 - 200
[5] SUBSTITUTIONAL DOPING IN AMORPHOUS-SEMICONDUCTORS AS-SI SYSTEM
KNIGHTS, JC
[J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (04): : 663 - 667
[6] COORDINATION OF ARSENIC IMPURITIES IN AMORPHOUS SILICON-HYDROGEN ALLOYS
KNIGHTS, JC
HAYES, TM
MIKKELSEN, JC
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (11) : 712 - 715
[7] NEW PRECISION TECHNIQUE FOR MEASURING CONCENTRATION VERSUS DEPTH OF HYDROGEN IN SOLIDS
LANFORD, WA
TRAUTVETTER, HP
ZIEGLER, JF
KELLER, J
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 566 - 568
[8] Mott N. F., 1971, ELECTRONIC PROCESSES, P37
[9] HYDROGEN PROFILING IN AMORPHOUS-SILICON FILMS AND P-N-JUNCTIONS
MULLER, G
DEMOND, F
KALBITZER, S
DAMJANTSCHITSCH, H
MANNSPERGER, H
SPEAR, WE
LECOMBER, PG
GIBSON, RA
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (05): : 571 - 579
[10] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING
PAUL, W
LEWIS, AJ
CONNELL, GAN
MOUSTAKAS, TD
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (10) : 969 - 972