DRIFT AND HALL MOBILITIES OF ELECTRONS IN INSB AT 30 AND 77 K

被引：6

作者：

DUTTA, GM ^{[1
]}

CHATTOPA.D ^{[1
]}

NAG, BR ^{[1
]}

机构：

[1] UNIV CALCUTTA,CTR ADV STUDY RADIO PHYS & ELECTR,CALCUTTA 9,INDIA

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1974年 / 7卷 / 10期

关键词：

D O I：

10.1088/0022-3719/7/10/012

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1854 / 1856

页数：3

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[7] LOW-FIELD GALVANOMAGNETIC TRANSPORT IN N-TYPE GALLIUM-ARSENIDE [J].

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[8] ELECTRON MOBILITY IN DIRECT-GAP POLAR SEMICONDUCTORS [J].

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