ELECTROREFLECTANCE AT OBLIQUE INCIDENCE IN GE

被引：2

作者：

BALLARO, S

BALZAROTTI, A

GRASSO, V

机构：

[1] Istituto di Fisica, Dell' Università di Messina, Messina

[2] Istituto di Fisica dell' Università, L'Aquila

来源：

PHYSICA STATUS SOLIDI | 1968年 / 28卷 / 02期

关键词：

D O I：

10.1002/pssb.19680280249

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

[No abstract available]

引用

页码：K109 / +

页数：1

共 11 条

[1]

AYMERICH F, TO BE PUBLISHED

[2] ELECTROREFLECTANCE NEAR ANISOTROPIC INTERBAND-EDGES [J].

BOTTKA, N ;

ROESSLER, U .

SOLID STATE COMMUNICATIONS, 1967, 5 (12) :939-&

[3]

BURST D, 1964, PHYS REV, V134, P1337

[4] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].

CARDONA, M ;

SHAKLEE, KL ;

POLLAK, FH .

PHYSICAL REVIEW, 1967, 154 (03) :696-+

[5] ELECTROREFLECTANCE SPECTRA AND BAND STRUCTURE OF GERMANIUM [J].

GHOSH, AK .

PHYSICAL REVIEW, 1968, 165 (03) :888-&

[6] DIELECTRIC CONSTANT BEHAVIOR NEAR BAND EDGES IN CDTE AND GE [J].

MARPLE, DTF ;

EHRENREICH, H .

PHYSICAL REVIEW LETTERS, 1962, 8 (03) :87-&

[7] TRANSVERSE ELECTROREFLECTANCE [J].

REHN, V ;

KYSER, DS .

PHYSICAL REVIEW LETTERS, 1967, 18 (20) :848-&

[8] OPTICAL FIELD EFFECT IN SILICON [J].

SERAPHIN, BO .

PHYSICAL REVIEW, 1965, 140 (5A) :1716-&

[9] FRANZ-KELDYSH EFFECT ABOVE FUNDAMENTAL EDGE IN GERMAINIUM [J].

SERAPHIN, BO ;

HESS, RB .

PHYSICAL REVIEW LETTERS, 1965, 14 (05) :138-&

[10] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].

SHAKLEE, KL ;

POLLAK, FH ;

CARDONA, M .

PHYSICAL REVIEW LETTERS, 1965, 15 (23) :883-&

← 1 2 →