PHOTOLUMINESCENCE STUDIES OF SILVER-EXCHANGED CADMIUM SELENIDE CRYSTALS - MODIFICATION OF A CHEMICAL SENSOR FOR ANILINE DERIVATIVES BY HETEROJUNCTION FORMATION

被引:41
作者
LEUNG, LK
KOMPLIN, NJ
ELLIS, AB
TABATABAIE, N
机构
[1] UNIV WISCONSIN, DEPT CHEM, MADISON, WI 53706 USA
[2] UNIV WISCONSIN, DEPT ELECT & COMP ENGN, MADISON, WI 53706 USA
关键词
D O I
10.1021/j100168a039
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Single-crystal n-CdSe surfaces have been modified by an exchange reaction with aqueous Ag+ that converts part of the surface to Ag2Se and releases Cd2+ to solution. Formation of Ag2Se is established by X-ray powder diffraction. ESCA and Auger spectroscopy are consistent with the formation of Ag2Se islands having thicknesses of approximately 20-500 angstrom, depending on reaction conditions. Steady-state photoluminescence (PL) experiments show that Ag+-exchanged CdSe (CdSe/Ag+) can be superior to CdSe as an aniline sensor: ring-substituted aniline derivatives in toluene solution cause enhancements of the CdSe band edge PL in CdSe/Ag+ samples relative to a toluene ambient, with the effect about twice as large as for unexchanged CdSe. The variations in PL intensity of CdSe/Ag+ are well fit by a dead-layer model, allowing estimation of the adduct-induced change in depletion width. The magnitude of these variations in depletion width for CdSe/Ag+ can approach 1000 angstrom. The affinity of the aniline derivatives for the CdSe/Ag+ surfaces, as estimated from the fit of concentration-dependent PL changes to the Langmuir adsorption isotherm model, is also about twice that of unexchanged CdSe: equilibrium constants are about 60-300 M-1 for the binding of several aniline derivatives to CdSe/Ag+. Time-resolved PL decay curves of the CdSe edge emission of CdSe/Ag+ samples demonstrate that the rate of carrier recombination increases with the extent of the exchange reaction, eventually saturating. PL decay curves of CdSe/Ag+ are insensitive to adduct formation for p-OCH3 and p-CH3 derivatives, suggesting that the surface recombination velocity is not greatly affected by aniline adsorption. An isotype heterojunction model for the CdSe/Ag2Se interface is proposed to rationalize these observations.
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页码:5918 / 5924
页数:7
相关论文
共 45 条
[1]   ELECTRONIC-ENERGY TRANSFER AT SEMICONDUCTOR INTERFACES .1. ENERGY-TRANSFER FROM TWO-DIMENSIONAL MOLECULAR FILMS TO SI(111) [J].
ALIVISATOS, AP ;
ARNDT, MF ;
EFRIMA, S ;
WALDECK, DH ;
HARRIS, CB .
JOURNAL OF CHEMICAL PHYSICS, 1987, 86 (11) :6540-6549
[2]  
[Anonymous], 1969, DATA REDUCTION ERROR
[3]   SURFACE RECOMBINATION VELOCITY-MEASUREMENTS OF CDS SINGLE-CRYSTALS IMMERSED IN ELECTROLYTES - A PICOSECOND PHOTOLUMINESCENCE STUDY [J].
BENJAMIN, D ;
HUPPERT, D .
JOURNAL OF PHYSICAL CHEMISTRY, 1988, 92 (16) :4676-4679
[4]   REACTIVE INTER-DIFFUSION AT METAL-CDS AND METAL-CDSE INTERFACES [J].
BRUCKER, CF ;
BRILLSON, LJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :787-791
[5]   REACTIVE INTER-DIFFUSION AND ELECTRONIC BARRIERS AT METAL-CDS AND METAL-CDSE INTERFACES - CONTROL OF SCHOTTKY-BARRIER HEIGHT USING REACTIVE INTERLAYERS [J].
BRUCKER, CF ;
BRILLSON, LJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :617-622
[6]   AG+ EXCHANGE AT CDS ELECTRODE SURFACES [J].
BRUZZONI, P ;
JUTTNER, K .
ELECTROCHIMICA ACTA, 1984, 29 (12) :1665-1671
[7]   PHOTOLUMINESCENT PROPERTIES OF N-GAAS ELECTRODES - SIMULTANEOUS DETERMINATION OF DEPLETION WIDTHS AND SURFACE HOLE-CAPTURE VELOCITIES IN PHOTOELECTROCHEMICAL CELLS [J].
BURK, AA ;
JOHNSON, PB ;
HOBSON, WS ;
ELLIS, AB .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) :1621-1626
[8]   THE GROWTH OF, AND THE FORMATION OF GRAIN-BOUNDARIES IN, CU2S FILMS GROWN ON FACETED SINGLE-CRYSTAL CDS SUBSTRATES [J].
CHENG, CH ;
JONES, KA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1375-1382
[9]  
CONSTANTINESCU LV, 1983, REV ROUM PHYS, V28, P73
[10]  
CONSTANTINESCU LV, 1980, REV ROUM PHYS, V26, P1123