EVIDENCE OF PRE-THERMALIZATION TRAPPING OF POSITRONS IN NEUTRON-IRRADIATED SILICON-DOPED GALLIUM-ARSENIDE

被引：4

作者：

CREAMER, SC

RICEEVANS, PC

GLEDHILL, GA

COLLINS, JD

机构：

[1] Physics Department, Royal Holloway and Bedford New College, University of London, Egham, Surrey

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1991年 / 63卷 / 04期

关键词：

D O I：

10.1080/13642819108205547

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Positron lifetime spectroscopy has been used to make an isochronal annealing study of neutron-irradiated silicon-doped GaAs. Lifetime spectra have been collected for the temperature range 290-825 K and analysed using conventional trapping models. Large deviations of the estimated positron free lifetime from its value in the annealed state are shown to occur; they have been interpreted as an indication of a strong trapping of positrons by defects prior to the positrons achieving thermal energies.

引用

页码：923 / 930

页数：8

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