VACANCY INTERACTIONS IN GAAS

被引：80

作者：

DANNEFAER, S

KERR, D

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 02期

关键词：

D O I：

10.1063/1.337452

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：591 / 594

页数：4

共 14 条

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[2]

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[5] INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON [J].

DANNEFAER, S ;

DEAN, GW ;

KERR, DP ;

HOGG, BG .

PHYSICAL REVIEW B, 1976, 14 (07) :2709-2714

[6] ON THE EFFECT OF BACKSCATTERING OF GAMMA-QUANTA AND STATISTICS IN POSITRON-ANNIHILATION LIFETIME MEASUREMENTS [J].

DANNEFAER, S .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1981, 26 (04) :255-259

[7] POSITRON STUDY OF NATIVE VACANCIES IN DOPED AND UNDOPED GAAS [J].

DLUBEK, G ;

BRUMMER, O ;

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HAUTOJARVI, P .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (03) :331-344

[8] POSITRON-ANNIHILATION IN PURE AND DOPED GAAS AT LOW-TEMPERATURE [J].

KERR, DP ;

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HOGG, BG .

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[9]

LAGOWSKI J, 1984, 13TH P INT C DEF SEM

[10]

MAGNO R, 1984, 13TH P INT C DEF SEM

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