DIFFUSION ACROSS A SEMICONDUCTOR-VAPOUR INTERFACE

被引：10

作者：

BULLOUGH, R

NEWMAN, RC

WAKEFIELD, J

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1958年 / 72卷 / 465期

关键词：

D O I：

10.1088/0370-1328/72/3/307

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：369 / 379

页数：11

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共 12 条

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[9] RATE LIMITATION AT THE SURFACE FOR IMPURITY DIFFUSION IN SEMICONDUCTORS
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