ELECTRONIC LEVELS AND PROPERTIES OF THE SELF-INTERSTITIALS IN IRRADIATED SILICON

DLTS studies of the electronic states and properties of irradiated p-type silicon are performed. The injection-enhanced annealing is observed for two traps E2 (E(c)-0.39 eV) and E1 (E(c)-0.26 eV). The annealing of E2 and E1 are simultaneous with the growth of the hole traps connected with V, C(i) and Al(i). It is concluded that the observed electronic levels belong to the different charge states of silicon selfinterstitial E2=Si(i)+ (3s(2)3p)/Si(i)2+ (3s2) and E1=Si(i)0 (3s(2)3p2)/Si(i)+ (3s(2)p). The conclusion is confirmed by the differences of the cross-sections of the formation of Al(i) and C(i) as well as by the influence of the zero and reverse bias conditions on the introduction rate and optical annealing of the E2 state.