NEW DEFECT STATES IN IRRADIATED P-TYPE SILICON

被引：18

作者：

ABDULLIN, KA

MUKASHEV, BN

TAMENDAROV, MF

TASHENOV, TB

机构：

[1] Institute of High Energy Physics, the Academy of Sciences of the Khazakh SSR

来源：

PHYSICS LETTERS A | 1990年 / 144卷 / 03期

关键词：

D O I：

10.1016/0375-9601(90)90700-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

DLTS measurements are used to detect two new defect states in irradiated p-type silicon. The amplitude and the rate of annealing of the E(0.39) state depende on the minority carrier injection level. It is supposed that the E(0.39) trap is a silicon interstitial related defect because the annealing of this state enhanced the concentration of interstitial carbon. The other new defect H(0.35) is identified as a metastable precursor to the CiOiH(0.38) center. An energy barrier of 1 eV separates the MH(0.35) state from the stable CiOi configuration. © 1990.

引用

页码：198 / 200

页数：3

共 10 条

[1]

BENTON JL, 1988, MATERIALS RES SOC P, V104, P86

[2]

CROMWELL CR, 1981, SOLID STATE ELECTRON, V24, P25

[3] ELECTRON-IRRADIATION DAMAGE IN ANTIMONY-DOPED SILICON [J].