PHOTOSTRICTION EFFECT IN SILICON OBSERVED BY TIME-RESOLVED X-RAY-DIFFRACTION

被引：18

作者：

BUSCHERT, JR ^{[1
]}

COLELLA, R ^{[1
]}

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

来源：

SOLID STATE COMMUNICATIONS | 1991年 / 80卷 / 06期

关键词：

D O I：

10.1016/0038-1098(91)90718-B

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have observed by X-ray diffraction the contraction of the lattice in silicon due to electron-hole pairs excited by laser light. The observed change in lattice parameter DELTA-a/a (congruent-to 10(-5)) is consistent with a photostriction constant beta-five times greater than the currently accepted value.

引用

页码：419 / 422

页数：4

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