INELASTIC-SCATTERING IN A DOPED POLAR SEMICONDUCTOR

被引:26
作者
JALABERT, R [1 ]
DASSARMA, S [1 ]
机构
[1] UNIV MARYLAND,DEPT PHYS,COLLEGE PK,MD 20742
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 06期
关键词
D O I
10.1103/PhysRevB.41.3651
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We calculate, within a many-body theory, the inelastic-scattering rate for hot electrons injected into doped GaAs as a function of electron energy and doping density by treating Coulomb and Fröhlich interactions on an equal footing. Our theory, which includes effects of quantum degeneracy, dynamical screening, plasmon-phonon mode coupling, and phonon self-energy correction, is in excellent quantitative agreement with recent experimental findings, and resolves a puzzle about why a recent observation of single-optical-phonon emission in highly doped GaAs can be quantitatively explained by unscreened theoretical results. © 1990 The American Physical Society.
引用
收藏
页码:3651 / 3654
页数:4
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