EXTENT OF CDSE PRESENCE AT FORMED SE-CD CONTACTS

被引：4

作者：

SEWELL, PB ^{[1
]}

CHAMPNESS, CH ^{[1
]}

ELAZAB, M ^{[1
]}

GENNAOUI, F ^{[1
]}

机构：

[1] MCGILL UNIV,DEPT ELECT ENGN,MONTREAL H3A 2A7,QUEBEC,CANADA

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1980年 / 42卷 / 02期

关键词：

D O I：

10.1080/01418638008227289

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：315 / 318

页数：4

共 8 条

[1]

Champness C. H., 1969, Proceedings of the International Symposium on the physics of selenium and tellurium, P349

[2]

DORIN VA, 1959, SOV PHYS-SOL STATE, V1, P669

[3]

ELAZAB M, 1976, J ELECTRON MATER, V5, P381, DOI 10.1007/BF02663366

[4] RECTIFICATION AT METAL-SELENIUM INTERFACE [J].

LANYON, HPD ;

RICHARDSON, RE .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 7 (02) :411-+

[5] VACUUM-DEPOSITED THIN-FILM P-SE/N-CDSE HETEROJUNCTION DIODES [J].

MOORE, RM ;

BUSANOVICH, CJ .

[6]

POGANSKI S, 1952, Z ELEKTROCHEM, V56, P193

[7] DER SPERRMECHANISMUS VON SELENGLEICHRICHTERN [J].

POGANSKI, S .

ZEITSCHRIFT FUR PHYSIK, 1953, 134 (04) :469-482

[8]

SEPEGA AE, 1972, PHYS STAT SOL A, V11, P713