LIFETIME OF EXCITONS IN GAAS QUANTUM-WELLS

被引：19

作者：

SERMAGE, B

LONG, S

DEVEAUD, B

KATZER, DS

机构：

[1] FRANCE TELECOM,CNET,LAB,F-22300 LANNION,FRANCE

[2] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL DE PHYSIQUE IV | 1993年 / 3卷 / C5期

关键词：

D O I：

10.1051/jp4:1993504

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Time resolved luminescence measurements under resonant excitation were performed at 10 K on the free exciton in very high quality GaAs-AlAs quantum wells. At resonance, the luminescence intensity is increased by two orders of magnitude, and the decay is short. The radiative lifetime of the excitons in the radiant states is about 18 ps in agreement with the theory of Hanamura and Andreani.

引用

收藏

页码：19 / 25

页数：7

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