USE OF TETRANEOPENTYLCHROMIUM AS A PRECURSOR FOR THE ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION OF CHROMIUM CARBIDE - A REINVESTIGATION

被引：30

作者：

HEALY, MD

SMITH, DC

RUBIANO, RR

ELLIOTT, NE

SPRINGER, RW

机构：

[1] LOS ALAMOS NATL LAB,CST-3,MS C346,LOS ALAMOS,NM 87545

[2] MIT,DEPT NUCL MED,CAMBRIDGE,MA 02139

来源：

CHEMISTRY OF MATERIALS | 1994年 / 6卷 / 04期

关键词：

D O I：

10.1021/cm00040a019

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of chromium carbide have been grown by organometallic chemical vapor deposition (OMCVD) from tetraneopentylchromium (Cr[CH2C(CH3)3]4, CrNp4). Deposition was performed in a hot wall, low pressure reactor at 520 and 570-degrees-C and a pressure of 1.33 X 10(-2) Pa (10(-4) Torr). No carrier gas was used. The resulting films were characterized by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), scanning electron microscopy (SEM), and elastic recoil detection (ERD). These data show that the films are of high quality, with very low oxygen content, and contain some residual amorphous carbon. Films grown at 570-degrees-C are crystalline. The observed crystalline phase is Cr7C3.

引用

页码：448 / 453

页数：6

共 15 条

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