TPD AND ESD OF HYDROGEN FROM DISILANE COVERED SI(100)

被引:16
作者
LOZANO, J [1 ]
CRAIG, JH [1 ]
CAMPBELL, JH [1 ]
ASCHERL, MV [1 ]
机构
[1] UNIV TEXAS,DEPT PHYS,EL PASO,TX 79968
基金
美国国家科学基金会;
关键词
D O I
10.1016/0168-583X(94)00845-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Disilane covered Si(100) was investigated using temperature programmed desorption (TPD) and electron stimulated desorption (ESD) for various disilane exposures. At low coverages, only monohydride species are observed-on the surface as seen by TPD. At high coverages, dihydride species appear. Kinetic energy distributions (KEDs) for H+ and H- were also obtained from Si(100) covered with varying amounts of disilane. Both H+ and H- KEDs exhibited two peaks each, suggesting that there are at least two types of hydrogen bound states on the surface. ESD decay curves were also obtained and exhibited double exponential decay behavior. ESD total cross sections were calculated using H+ and H- signal decays and compared with related data from the literature.
引用
收藏
页码:407 / 410
页数:4
相关论文
共 14 条
[1]  
ASAMI S, 1994, IN PRESS APPL SURF S
[2]   AN ESD KINETIC-ENERGY DISTRIBUTION STUDY OF TRIMETHYLSILANE ADSORBED ON SI(100) [J].
ASCHERL, MV ;
CAMPBELL, JH ;
CRAIG, JH .
APPLIED SURFACE SCIENCE, 1994, 74 (01) :121-127
[3]   ELECTRON-STIMULATED AND THERMAL-DESORPTION STUDY OF TRIMETHYLSILANE FROM SI(100) [J].
CAMPBELL, JH ;
ASCHERL, MV ;
CRAIG, JH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04) :2128-2133
[4]   H-INDUCED SURFACE RESTRUCTURING ON SI(100) - FORMATION OF HIGHER HYDRIDES [J].
CHENG, CC ;
YATES, JT .
PHYSICAL REVIEW B, 1991, 43 (05) :4041-4045
[5]   ELECTRON DESORPTION STUDY OF HF ETCHED SI(100) [J].
CRAIG, JH ;
CARISS, C ;
CRAIG, MJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (03) :554-556
[6]   TRANSMISSION CHARACTERISTICS OF A CYLINDRICAL ENERGY ANALYZER [J].
CRAIG, JH ;
DURRER, WG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (06) :3337-3340
[7]   CURRENT DISTRIBUTION IN ESD DIODES - CROSS-SECTION CORRECTIONS [J].
LIN, JC ;
GOMER, R .
SURFACE SCIENCE, 1986, 172 (01) :183-197
[8]   MECHANISMS AND KINETICS OF SI ATOMIC-LAYER EPITAXY ON SI(001)2X1 FROM SI2 H6 [J].
LUBBEN, D ;
TSU, R ;
BRAMBLETT, TR ;
GREENE, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (06) :3003-3011
[9]   ELECTRON-IMPACT DESORPTION OF IONS FROM POLYCRYSTALLINE TUNGSTEN [J].
NISHIJIMA, M ;
PROPST, FM .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (07) :2368-+
[10]   HYDROGEN DESORPTION FROM THE MONOHYDRIDE PHASE ON SI(100) [J].
SINNIAH, K ;
SHERMAN, MG ;
LEWIS, LB ;
WEINBERG, WH ;
YATES, JT ;
JANDA, KC .
JOURNAL OF CHEMICAL PHYSICS, 1990, 92 (09) :5700-5711