SELECTIVE GROWTH OF P+-GAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：8

作者：

FURUHATA, N

SHIMAWAKI, H

OKAMOTO, A

机构：

[1] Microelectronics Research Laboratories, NEC Corporation, Miyamae-ku, Kawasaki, 213

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90605-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

[No abstract available]

引用

页码：1049 / 1050

页数：2

共 4 条

[1] HIGH-PURITY GAAS AND ALXGA1-XAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

FURUHATA, N ;

OKAMOTO, A ;

HOSHINO, H .

JOURNAL OF CRYSTAL GROWTH, 1990, 102 (04) :814-818

[2] SELECTIVE GROWTH OF GAAS IN THE MOMBE AND MOCVD SYSTEMS [J].

HEINECKE, H ;

BRAUERS, A ;

GRAFAHREND, F ;

PLASS, C ;

PUTZ, N ;

WERNER, K ;

WEYERS, M ;

LUTH, H ;

BALK, P .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :303-309

[3] METALLIC P-TYPE GAAS AND GAALAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

KONAGAI, M ;

YAMADA, T ;

AKATSUKA, T ;

SAITO, K ;

TOKUMITSU, E ;

TAKAHASHI, K .

JOURNAL OF CRYSTAL GROWTH, 1989, 98 (1-2) :167-173

[4] SELECTIVE EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY [J].

OKAMOTO, A ;

OHATA, K .

APPLIED PHYSICS LETTERS, 1987, 51 (19) :1512-1514

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