SELECTIVE EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY

被引：55

作者：

OKAMOTO, A

OHATA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 19期

关键词：

D O I：

10.1063/1.98619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1512 / 1514

页数：3

共 17 条

[1] TEMPERATURE-DEPENDENCE OF MOLECULAR-BEAM EPITAXIAL-GROWTH RATES FOR INXGA1-XAS AND INXAL1-XAS [J].

CHIKA, S ;

KATO, H ;

NAKAYAMA, M ;

SANO, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09) :1441-1442

[2] GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE) [J].

CHO, AY ;

BALLAMY, WC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :783-785

[3] LOW-LOSS WAVEGUIDES GROWN ON GAAS USING LOCALIZED VAPOR-PHASE EPITAXY [J].

ERMAN, M ;

VODJDANI, N ;

THEETEN, JB ;

CABANIE, JP .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :894-895

[4] SELECTIVE AREA GROWTH OF GALLIUM-ARSENIDE BY METALORGANIC VAPOR-PHASE EPITAXY [J].

GHOSH, C ;

LAYMAN, RL .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1229-1231

[5]

Gray D.E., 1972, AM I PHYS HDB, V3rd, P4

[6] THERMODYNAMIC ASPECTS OF MOLECULAR-BEAM EPITAXY - HIGH-TEMPERATURE GROWTH IN THE GAAS/GA1-XALXAS SYSTEM [J].

HECKINGBOTTOM, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :572-575

[7] SELECTIVE GROWTH OF GAAS IN THE MOMBE AND MOCVD SYSTEMS [J].

HEINECKE, H ;

BRAUERS, A ;

GRAFAHREND, F ;

PLASS, C ;

PUTZ, N ;

WERNER, K ;

WEYERS, M ;

LUTH, H ;

BALK, P .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :303-309

[8] LATERAL DEFINITION OF MONO-CRYSTALLINE GAAS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

HIYAMIZU, S ;

NANBU, K ;

FUJII, T ;

SAKURAI, T ;

HASHIMOTO, H ;

RYUZAN, O .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1562-1567

[9] SELECTIVE EPITAXIAL-GROWTH OF GAAS BY LOW-PRESSURE MOVPE [J].

KAMON, K ;

TAKAGISHI, S ;

MORI, H .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) :73-76

[10] SELECTIVE EPITAXIAL-GROWTH OF INAS ON GAAS BY MOLECULAR-BEAM EPITAXY [J].

OKAMOTO, A ;

OHATA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07) :L1174-L1176

← 1 2 →