ATOMIC LAYER EPITAXY OF (CDTE)M(ZNTE)N-ZNTE MULTIQUANTUM WELLS ON (001)GAAS SUBSTRATE

被引:17
作者
LI, J
HE, L
SHAN, W
CHENG, XY
YUAN, SX
机构
[1] Shanghai Institute of Technical Physics, Academia Sinica, 420 Zhong Shan Bei Yi Road
关键词
D O I
10.1016/0022-0248(91)91072-I
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
(CdTe)(m)(ZnTe)(n)-ZnTe multiquantum well structure has been proposed and grown on (001)GaAs substrate by atomic layer epitaxy. Growth has been investigated using reflection high energy electron diffraction. Material characterizations have been performed by X-ray diffraction and photoluminescence. With this structure, great improvements have been made in crystalline quality compared with CdTe-ZnTe multiquantum wells, due to the reduction of misfit dislocations.
引用
收藏
页码:736 / 740
页数:5
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