ELECTRON-TUNNELING IN THE HIGH-TC BISMUTHATE SUPERCONDUCTORS

被引：59

作者：

SHARIFI, F ^{[1
]}

PARGELLIS, A ^{[1
]}

DYNES, RC ^{[1
]}

MILLER, B ^{[1
]}

HELLMAN, ES ^{[1
]}

ROSAMILIA, J ^{[1
]}

HARTFORD, EH ^{[1
]}

机构：

[1] AT&T BELL LABS,600 MTN AVE,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 22期

关键词：

D O I：

10.1103/PhysRevB.44.12521

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have performed extensive tunneling measurements on some high-T(c) superconducting oxides of bismuth: BaPb1-xBixO3, Ba1-xRbxBiO3, and Ba1-xKxBiO3. The results on high-quality single crystals and epitaxial films indicate that these materials are weak-coupled superconductors with 2-DELTA/kT(c) = 3.5 +/- 0.3. The observed quasiparticle excitation spectrum agrees with the BCS model. We also do not observe structure indicating electron-phonon coupling sufficiently strong to account for the T(c) of these materials.

引用

页码：12521 / 12524

页数：4

共 13 条

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