W-BAND MONOLITHIC FREQUENCY DOUBLER USING VERTICAL GAAS VARACTOR DIODE WITH N+ BURIED LAYER

被引：6

作者：

HEGAZI, G ^{[1
]}

EZZEDDINE, A ^{[1
]}

PHELLEPS, F ^{[1
]}

MCNALLY, P ^{[1
]}

PANDE, K ^{[1
]}

RICE, P ^{[1
]}

PAGES, P ^{[1
]}

机构：

[1] HERCULES DEF ELECTR SYST,CLEARWATER,FL 33518

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 03期

关键词：

FREQUENCY MULTIPLIERS; DIODES;

D O I：

10.1049/el:19910138

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A W-band monolithic frequency doubler was designed and fabricated using vertical GaAs varactor diode that has an n+ buried layer and uses a mesa isolation process. An output power of 30 mW was obtained from this chip at 93 GHz with a conversion efficiency of 12%. This is believed to be the first reported W-band monolithic varactor diode frequency doubler.

引用

页码：213 / 214

页数：2

共 5 条

[1]

Chu A., 1984, IEEE MTT S S, P51

[2]

Hegazi G., 1989, IEEE 1989 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers (Cat. No.89CH2761-5), P121, DOI 10.1109/MCS.1989.37277

[3] 94 GHZ INP MMIC 5-SECTION DISTRIBUTED-AMPLIFIER [J].

MAJIDIAHY, R ;

RIAZIAT, M ;

NISHIMOTO, C ;

GLENN, M ;

SILVERMAN, S ;

WENG, S ;

PAO, YC ;

ZDASIUK, G ;

BANDY, S ;

TAN, Z .

ELECTRONICS LETTERS, 1990, 26 (02) :91-92

[4]

METZE G, IN PRESS IEEE ELECTR

[5]

SIEGEL PH, 1984, NASA2287 TECHN PAP

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