A NEW TECHNOLOGY FOR NEGATIVE-ION DETECTION AND THE RAPID ELECTRON COOLING IN A PULSED HIGH-DENSITY ETCHING PLASMA

被引:50
作者
AHN, TH
NAKAMURA, K
SUGAI, H
机构
[1] Department of Electrical Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya
[2] Semiconductor R and D Center, Samsung Electronics Co Ltd
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 10B期
关键词
INDUCTIVELY-COUPLED PLASMA; CHLORINE PLASMA; PULSED PLASMA; NEGATIVE ION; PHOTODETACHMENT; PLASMA OSCILLATION; DISSOCIATIVE ATTACHMENT;
D O I
10.1143/JJAP.34.L1405
中图分类号
O59 [应用物理学];
学科分类号
摘要
Time-resolved measurements of key parameters in an inductively-coupled pulsed discharge in chlorine are carried out to elucidate a feature of pulsed plasma etching. Langmuir probe diagnostics in the afterglow phase show a very fast decrease in the electron temperature from 3.5 eV to 0.8 eV within 10 mu s, along with a plasma potential drop from 22 V to 5 V. A new technique for measuring the time-varying absolute negative ion density is developed, which is based on laser-induced photodetachment and electron-beam excited instabilities at plasma frequency. This novel method reveals that the dissociative electron attachment yields a large increase in the chlorine negative ion density of up to 2 x 10(10) cm(-3) (similar to 50% of the positive ion density) at an afterglow time of 20 mu s.
引用
收藏
页码:L1405 / L1408
页数:4
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