QUANTITATIVE INFRARED CHARACTERIZATION OF PLASMA ENHANCED CVD SILICON OXYNITRIDE FILMS

被引：35

作者：

ROSTAING, JC

CROS, Y

GUJRATHI, SC

POULAIN, S

机构：

[1] UNIV MONTREAL,PHYS NUCL LAB,MONTREAL H3C 3J7,QUEBEC,CANADA

[2] UNIV GRENOBLE 1,F-38402 ST MARTIN HERES,FRANCE

[3] ECOLE POLYTECH,DGE,MONTREAL H3C 3A7,QUEBEC,CANADA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90252-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1051 / 1054

页数：4

共 7 条

[1] IR, ELECTRON-SPIN-RESONANCE AND RESISTIVITY MEASUREMENTS ON AMORPHOUS-SILICON OXI-NITRIDE FILMS PREPARED BY PECVD AT LOW-TEMPERATURE [J].

CROS, Y ;

JOUSSE, D ;

LIU, J ;

ROSTAING, JC .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 90 (1-3) :287-290

[2]

CROS Y, 1986, EDITIONS PHYSIQUE, V77

[3]

CROS Y, 1987, IN PRESS JUN INT C A

[4]

CROS Y, 1987, IN PRESS J APPL JUN

[5] PLASMA-ENHANCED GROWTH AND COMPOSITION OF SILICON OXYNITRIDE FILMS [J].

DENISSE, CMM ;

TROOST, KZ ;

ELFERINK, JBO ;

HABRAKEN, FHPM ;

VANDEWEG, WF ;

HENDRIKS, M .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2536-2542

[6] TIME-OF-FLIGHT SYSTEM FOR PROFILING RECOILED LIGHT-ELEMENTS [J].

GROLEAU, R ;

GUJRATHI, SC ;

MARTIN, JP .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :11-15

[7]

GUJRATHI SC, IN PRESS

← 1 →