IR, ELECTRON-SPIN-RESONANCE AND RESISTIVITY MEASUREMENTS ON AMORPHOUS-SILICON OXI-NITRIDE FILMS PREPARED BY PECVD AT LOW-TEMPERATURE

被引:13
作者
CROS, Y
JOUSSE, D
LIU, J
ROSTAING, JC
机构
关键词
D O I
10.1016/S0022-3093(87)80428-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
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页码:287 / 290
页数:4
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