GUNN EFFECT IN NON-TYPE INSB

被引：48

作者：

SMITH, JE

NATHAN, MI

MCGRODDY, JC

POROWSKI, SA

WILLIAM, P

机构：

[1] IBM Thomas J. Watson Research Center

[2] IBM Thomas J. Watson Research Center

来源：

APPLIED PHYSICS LETTERS | 1969年 / 15卷 / 08期

关键词：

D O I：

10.1063/1.1652985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we report the observation of the Gunn effect in n-type InSb at 77°K and atmospheric pressure. This result is surprising, since it was previously thought that the large amount of carrier multiplication at fields below the Gunn threshold would preclude observation of the Gunn effect in InSb and similar materials. Several explanations for the negative differential conductivity underlying the Gunn effect in this case are possible, but the intervalley transfer mechanism is most consistent with the observed negative pressure coefficient of the threshold field. © 1969 The American Institute of Physics.

引用

页码：242 / +

页数：1

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