PHOTO-FET METHOD - HIGH-RESOLUTION DEEP-LEVEL MEASUREMENT TECHNIQUE USING A MESFET STRUCTURE

被引:13
作者
TEGUDE, FJ
HEIME, K
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D O I
10.1049/el:19800019
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:22 / 23
页数:2
相关论文
共 5 条
[1]  
ARNOLD N, 1979, 11TH INT C SOL STAT, P89
[2]   INTERPRETATION OF PHOTOCONDUCTIVITY AND PHOTO-HALL SPECTRA IN SEMI-INSULATING GAAS-CR [J].
LOOK, DC .
SOLID STATE COMMUNICATIONS, 1977, 24 (12) :825-828
[3]  
Petroff P M, 1978, SCANNING ELECTRON MI, V1, P325
[4]   THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J].
SAH, CT ;
FORBES, L ;
ROSIER, LL ;
TASCH, AF .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :759-+
[5]  
TANIMOTO M, 1979, T IECE C, V60, P698