PREPARATION OF HIGH-QUALITY BARIUM FLUORIDE THIN-FILM BY CHEMICAL-VAPOR-DEPOSITION

被引：5

作者：

SATO, H

SUGAWARA, S

机构：

[1] NTT Opto-Electronics Laboratories, Tokai, Ibaraki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 6A期

关键词：

BARIUM FLUORIDE; THIN FILM; CVD; CALCIUM FLUORIDE SUBSTRATE; BARIUM BETA-DIKETONE CHELATE; RBS SPECTRUM;

D O I：

10.1143/JJAP.32.L799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality BaF2 (111) thin film was epitaxially grown on a CaF2 (111) substrate by chemical vapor deposition. An novel fluorinated Barium beta-diketone chelate; Ba(ofhd)2 Was used as the source material. Oxygen was introduced to complete the fluorination of the barium precursor. The full width at half maximum (DELTAtheta50) of the X-ray. rocking curve of the film was 3-10 min. RBS spectra showed that the chi(min) value of the BaF2 film was 3.7% and that of BaF2 single crystal was 2.8%. SIMS analysis confirmed that carbon and oxygen incorporation was at background levels.

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页码：L799 / L801

页数：3

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