FLUORIDE SEMICONDUCTOR AND SEMICONDUCTOR FLUORIDE SEMICONDUCTOR HETEROEPITAXIAL STRUCTURE RESEARCH - A REVIEW

被引：55

作者：

SINHAROY, S

机构：

[1] Westinghouse Science and Technology Center, Pittsburgh, PA 15235

来源：

THIN SOLID FILMS | 1990年 / 187卷 / 02期

关键词：

D O I：

10.1016/0040-6090(90)90045-F

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial fluorides have attracted attention in recent years because of the many potential microelectronic and optoelectronic device applications of semiconductor/ epitaxial fluoride/semiconductor structures. In this paper, we present a very brief review of the current status of the fluoride/semiconductor structures and a slightly expanded review of the semiconductor/fluoride/semiconductor heteroepitaxial structures that have been reported to date, along with a short discussion of the future prospects of this technology. © 1990.

引用

页码：231 / 243

页数：13

共 87 条

[1] FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS
ASANO, T
ISHIWARA, H
LEE, HC
TSUTSUI, K
FURUKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02): : L139 - L141
[2] EPITAXIAL-GROWTH OF GE FILMS ONTO CAF2-SI STRUCTURES
ASANO, T
ISHIWARA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (10): : L630 - L632
[3] AN EPITAXIAL SI/INSULATOR/SI STRUCTURE PREPARED BY VACUUM DEPOSITION OF CAF2 AND SILICON
ASANO, T
ISHIWARA, H
[J]. THIN SOLID FILMS, 1982, 93 (1-2) : 143 - 150
[4] EPITAXIAL-GROWTH OF SI FILMS ON CAF2/SI STRUCTURES WITH THIN SI LAYERS PREDEPOSITED AT ROOM-TEMPERATURE
ASANO, T
ISHIWARA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3566 - 3570
[5] FABRICATION OF MOSFETS IN SI/CAF2/SI HETEROEPITAXIAL STRUCTURES
ASANO, T
KURIYAMA, Y
ISHIWARA, H
[J]. ELECTRONICS LETTERS, 1985, 21 (09) : 386 - 387
[6] HETEROEPITAXIAL GROWTH OF GROUP-IIA-FLUORIDE FILMS ON SI SUBSTRATES
ASANO, T
ISHIWARA, H
KAIFU, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10): : 1474 - 1481
[7] SCANNING TUNNELING MICROSCOPY OF INSULATORS - CAF2 EPITAXY ON SI(111)
AVOURIS, P
WOLKOW, R
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (11) : 1074 - 1076
[8] EPITAXIAL-GROWTH OF SILICON AND GERMANIUM FILMS ON CAF2/SI
BARKAI, M
LEREAH, Y
GRUNBAUM, E
DEUTSCHER, G
[J]. THIN SOLID FILMS, 1986, 139 (03) : 287 - 297
[9] EVIDENCE FOR THE INFLUENCE OF INTERFACIAL ATOMIC-STRUCTURE ON ELECTRICAL-PROPERTIES AT THE EPITAXIAL CAF2/SI(111) INTERFACE
BATSTONE, JL
PHILLIPS, JM
HUNKE, EC
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (14) : 1394 - 1397
[10] GROWTH OF LATTICE-MISMATCHED STACKED EPITAXIAL CAF2-SRF2-BAF2 LAYERS ON (100) ORIENTED SI SUBSTRATES
BLUNIER, S
ZOGG, H
WEIBEL, H
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1512 - 1514

← 1 2 3 4 5 6 7 8 9 →