CHARACTERIZATION OF OXIDIZED GAAS (001) SURFACES USING TEMPERATURE PROGRAMMED DESORPTION AND X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：66

作者：

TONE, K

YAMADA, M

IDE, Y

KATAYAMA, Y

机构：

[1] Optoelectronics Technology Research Laboratory, Tsukuba, Ibaraki, 300-26

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 6A期

关键词：

SURFACE OXIDE ON GAAS; TEMPERATURE PROGRAMMED DESORPTION; MASS SPECTROMETRY; X-RAY PHOTOELECTRON SPECTROSCOPY; GA2O; GA2O3;

D O I：

10.1143/JJAP.31.L721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature programed desorption (TPD) and X-ray photoelectron spectroscopy (XPS) were carried out on oxidized GaAs (001) surfaces in order to obtain insight into the durability of the oxide masks used in in situ selective-area processing. The TPD spectra comprised three successive desorption peaks showing the desorption of arsenic at 390-degrees-C, Ga2O at 475-degrees-C, and both Ga2O and arsenic above 500-degrees-C. XPS revealed the disappearance of As oxide and an increase of Ga oxide during the first desorption. The coexistence of two forms of Ga oxide, i.e., Ga2O and Ga2O3, is suggested, and a mechanism of oxide desorption is proposed.

引用

页码：L721 / L724

页数：4

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