HIGH-POWER-DENSITY SINGLE-MODE OPERATION OF GAAS-GAALAS TJS']JS LASERS UTILIZING SI3N4 PLASMA DEPOSITION FOR FACET COATING

被引：13

作者：

NAMIZAKI, H

TAKAMIYA, S

ISHII, M

SUSAKI, W

机构：

[1] Semiconductor Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 05期

关键词：

D O I：

10.1063/1.326281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new method of laser diode facet coating, plasma deposition of Si 3N4 film, has been developed. Utilizing it, laser diodes which operate at 4 mW/μm power density in single longitudinal and fundamental transverse mode for more than 1000 h have been realized.

引用

收藏

页码：3743 / 3745

页数：3

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