NUMERICAL-STUDIES OF FEMTOSECOND CARRIER DYNAMICS IN GAAS

被引：67

作者：

BAILEY, DW ^{[1
]}

STANTON, CJ ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS,BECKMAN INST,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.42.3423

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present simulations of 2-eV femtosecond differential transmission experiments in GaAs. Electron and heavy-, light-, and split-off-hole dynamics are calculated by an ensemble Monte Carlo method. To account for valence-band nonparabolicity and anisotropy, a 30-band kp method is used to determine hole band structure, optical matrix elements, density of states, and Bloch overlap factors. Using the distribution functions obtained from the Monte Carlo simulations, we calculate the differential transmission and compare directly with experimental spectra. We show that the inclusion of both collisional broadening during photoexcitation and holes is essential to reproduce accurately the experimental results. We also discuss the effects of intervalley and carrier-carrier scattering in these measurements. © 1990 The American Physical Society.

引用

页码：3423 / 3434

页数：12

共 44 条

[41] BAND-STRUCTURE EFFECTS ON THE FEMTOSECOND ENERGY RELAXATION OF PHOTOEXCITED ELECTRONS IN ALXGA1-XAS GAAS QUANTUM WELLS [J].