SURFACE AND BULK LASER-DAMAGE STATISTICS AND IDENTIFICATION OF INTRINSIC BREAKDOWN PROCESSES

被引：28

作者：

BASS, M

FRADIN, DW

机构：

[1] RAYTHEON CO,RES DIV,WALTHAM,MA 02154

[2] HARVARD UNIV,CAMBRIDGE,MA 02138

来源：

关键词：

D O I：

10.1109/JQE.1973.1077766

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：890 / 896

页数：7

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BLOEMBERGEN, N .

[7]

BLOEMBERGEN N, 1973, APPL OPT APR

[8]

BUA D, 1972, IEEE J QUANTUM ELECT, VQE 8, P916

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CHYNOWETH, AG .

[10] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J].

CHYNOWETH, AG .

PHYSICAL REVIEW, 1958, 109 (05) :1537-1540