STUDY OF ELECTRICAL-PROPERTIES OF PULSED EXCIMER-LASER DEPOSITED STRONTIUM-TITANATE FILMS

被引:28
作者
RAO, GM
KRUPANIDHI, SB
机构
[1] PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIV PK,PA 16802
[2] INDIAN INST SCI,BANGALORE 560012,KARNATAKA,INDIA
关键词
D O I
10.1063/1.356235
中图分类号
O59 [应用物理学];
学科分类号
摘要
Polycrystalline SrTiO3 films were prepared by pulsed excimer laser ablation on Si and Pt coated Si substrates. Several growth parameters were varied including ablation fluence, pressure, and substrate temperature. The structural studies indicated the presence of [100] and [110] oriented growth after annealing by rapid thermal annealing at 600-degrees-C for 60 s. Deposition at either lower pressures or at higher energy densities encouraged film growth with slightly preferred orientation. The scanning electron microscopy studies showed the absence of any significant particulates on the film surface. Dielectric studies indicated a dielectric constant of 225, a capacitance density of 3.2 fF/mum2, and a charge density of 40 fC/mum for films of 1000 nm thick. The dc conductivity studies on these films suggested a bulk limited space charge conduction in the high field regime, while the low electric fields induced an ohmic conduction. Brief time dependent dielectric breakdown studies on these films, under a field of 250 kV/cm for 2 h, did not exhibit any breakdown, indicating good dielectric strength.
引用
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页码:2604 / 2610
页数:7
相关论文
共 23 条
[1]  
ARAUJO CA, 1990, FERROELECTRICS, V104, P241
[2]   ELECTRIC-FIELD DEPENDENCE OF DIELECTRIC-CONSTANT OF PZT FERROELECTRIC CERAMICS [J].
BARCHAIM, N ;
BRUNSTEIN, M ;
GRUNBERG, J ;
SEIDMAN, A .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2398-2405
[3]  
HO N, 1992, J VAC SCI TECHNOL A, V10, P87
[4]  
HU H, 1992, J APPL PHYS, V71, P376
[5]   STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF SRTIO3 THIN-FILMS FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATIONS [J].
JOSHI, PC ;
KRUPANIDHI, SB .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) :7627-7634
[6]  
KRUPANIDHI SB, 1992, J VAC SCI TECHNOL A, V10, P185
[7]   A FERROELECTRIC DRAM CELL FOR HIGH-DENSITY NVRAMS [J].
MOAZZAMI, R ;
HU, CM ;
SHEPHERD, WH .
IEEE ELECTRON DEVICE LETTERS, 1990, 11 (10) :454-456
[8]  
PARKER LH, 1990, IEEE CIRCUITS DEVICE, P17
[9]  
Peng C., UNPUB
[10]   ELECTRICAL-PROPERTIES OF STRONTIUM-TITANATE THIN-FILMS BY MULTIION-BEAM REACTIVE SPUTTERING TECHNIQUE [J].
PENG, CJ ;
HU, H ;
KRUPANIDHI, SB .
APPLIED PHYSICS LETTERS, 1993, 63 (08) :1038-1040