CMOS INTEGRATED SILICON PRESSURE SENSOR

被引：44

作者：

ISHIHARA, T

SUZUKI, K

SUWAZONO, S

HIRATA, M

TANIGAWA, H

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1987年 / 22卷 / 02期

关键词：

D O I：

10.1109/JSSC.1987.1052696

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：151 / 156

页数：6

共 14 条

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[3] PRESSURE SENSITIVITY IN ANISOTROPICALLY ETCHED THIN-DIAPHRAGM PRESSURE SENSORS [J].

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WISE, KD .

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[5]

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[6] TEMPERATURE SENSITIVITY IN SILICON PIEZORESISTIVE PRESSURE TRANSDUCERS [J].

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WISE, KD .

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[9]

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[10]

SUZUKI K, 1984, IECE JAPAN ED, V84

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