DEEP LEVELS IN GA-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY

被引：17

作者：

VENKATESAN, S

PIERRET, RF

QUI, J

KOBAYASHI, M

GUNSHOR, RL

KOLODZIEJSKI, LA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.344077

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3656 / 3660

页数：5

共 23 条

[1] SPECTROSCOPIC OBSERVATION OF A VACANCY COMPLEX IN GAP [J].

BHARGAVA, RN ;

KURTZ, SK ;

VINK, AT ;

PETERS, RC .

PHYSICAL REVIEW LETTERS, 1971, 27 (04) :183-+

[2] DIFFUSION STUDIES OF THE SI-DELTA-DOPED GAAS BY CAPACITANCE-VOLTAGE MEASUREMENT [J].

CHIU, TH ;

CUNNINGHAM, JE ;

TELL, B ;

SCHUBERT, EF .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1578-1580

[3]

CHRISTIANSON KA, 1983, J APPL PHYS, V53, P4205

[4] PLANAR DOPING WITH GALLIUM OF MOLECULAR-BEAM EPITAXIAL ZNSE [J].

DEMIGUEL, JL ;

SHIBLI, SM ;

TAMARGO, MC ;

SKROMME, BJ .

APPLIED PHYSICS LETTERS, 1988, 53 (21) :2065-2067

[5] ZINC VACANCY-ASSOCIATED DEFECTS AND DONOR-ACCEPTOR RECOMBINATION IN ZNSE [J].

DUNSTAN, DJ ;

NICHOLLS, JE ;

CAVENETT, BC ;

DAVIES, JJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (34) :6409-6419

[6] RECENT ADVANCES IN THE MOLECULAR-BEAM EPITAXY OF THE WIDE-BANDGAP SEMICONDUCTOR ZNSE AND ITS SUPERLATTICES [J].

GUNSHOR, RL ;

KOLODZIEJSKI, LA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) :1744-1757

[7] DETECTION OF TRAPS IN ZNSE GROWN BY LIQUID-PHASE EPITAXY [J].

IDO, T ;

OKADA, M .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :170-173

[8]

LANG DV, 1974, J APPL PHYS, V45, P3024

[9] RECENT DEVELOPMENTS IN THE MOVPE OF II-VI-COMPOUNDS [J].

MULLIN, JB ;

IRVINE, SJC ;

GIESS, J ;

ROYLE, A .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :1-12

[10] DEEP LEVELS ASSOCIATED WITH (VACANCY, IMPURITY) PAIRS IN COVALENT SEMICONDUCTORS [J].

MYLES, CW ;

SANKEY, OF .

PHYSICAL REVIEW B, 1984, 29 (12) :6810-6823

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