DIFFUSION STUDIES OF THE SI-DELTA-DOPED GAAS BY CAPACITANCE-VOLTAGE MEASUREMENT

被引：29

作者：

CHIU, TH ^{[1
]}

CUNNINGHAM, JE ^{[1
]}

TELL, B ^{[1
]}

SCHUBERT, EF ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.341789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1578 / 1580

页数：3

共 11 条

[1] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION DURING THE GROWTH OF GAAS BY CHEMICAL-BEAM EPITAXY [J].

CHIU, TH ;

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ROBERTSON, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :642-643

[2] CHEMICAL BEAM EPITAXIAL-GROWTH OF HIGH-PURITY GAAS USING TRIETHYLGALLIUM AND ARSINE [J].

CHIU, TH ;

TSANG, WT ;

SCHUBERT, EF ;

AGYEKUM, E .

APPLIED PHYSICS LETTERS, 1987, 51 (14) :1109-1111

[3] GALLIUM-INDUCED AND ARSENIC-INDUCED OSCILLATIONS OF INTENSITY OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION IN THE GROWTH OF (001) GAAS BY CHEMICAL BEAM EPITAXY [J].

CHIU, TH ;

TSANG, WT ;

CUNNINGHAM, JE .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) :2302-2307

[4] QUANTUM SIZE EFFECT IN DELTA-DOPED ALGAAS HETEROSTRUCTURES [J].

CUNNINGHAM, JE ;

TSANG, WT ;

SCHUBERT, EF ;

TIMP, G ;

CHIU, TH ;

CHANG, A ;

AGYEKUM, E ;

DITZENBERGER, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :599-602

[5] DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE [J].

GREINER, ME ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5181-5191

[6] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES [J].

JOHNSON, WC ;

PANOUSIS, PT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) :965-&

[7]

Robertson A. P. M, UNPUB

[8] SI ATOMIC-PLANAR-DOPING IN GAAS MADE BY MOLECULAR-BEAM EPITAXY [J].

SASA, S ;

MUTO, S ;

KONDO, K ;

ISHIKAWA, H ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L602-L604

[9] INTERPRETATION OF CAPACITANCE-VOLTAGE PROFILES FROM DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

SCHUBERT, EF ;

PLOOG, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (07) :966-970

[10] SELECTIVELY DELTA-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH HIGH TWO-DIMENSIONAL ELECTRON-GAS CONCENTRATIONS N2DEG-GREATER-THAN-OR-EQUAL-TO-1.5X10(12) CM-2 FOR FIELD-EFFECT TRANSISTORS [J].

SCHUBERT, EF ;

CUNNINGHAM, JE ;

TSANG, WT ;

TIMP, GL .

APPLIED PHYSICS LETTERS, 1987, 51 (15) :1170-1172

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