ATOMIC-STRUCTURE-DEPENDENT SCHOTTKY-BARRIER AT EPITAXIAL PB/SI(111) INTERFACES - COMMENT

被引：22

作者：

LELAY, G ^{[1
]}

HRICOVINI, K ^{[1
]}

机构：

[1] UNIV PARIS 11,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.65.807

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A Comment on the Letter by Heslinga et al., Phys. Rev. Lett. 64, 1589 (1990). © 1990 The American Physical Society.

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收藏

页码：807 / 807

页数：1

相关论文

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