SYNCHROTRON RADIATION INVESTIGATION AND SURFACE SPECTROSCOPY STUDIES OF PROTOTYPICAL SYSTEMS - LEAD-SEMICONDUCTOR INTERFACES

被引：60

作者：

LELAY, G

HRICOVINI, K

BONNET, JE

机构：

[1] UNIV PARIS 11,LAB UTILISAT RAYONNEMENT ELECTROMAGNET,F-91405 ORSAY,FRANCE

[2] UNIV AIX MARSEILLE 1,UFR SCI MATIERE,F-13331 MARSEILLE 3,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1989年 / 41-2卷

关键词：

D O I：

10.1016/0169-4332(89)90028-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Reviewing recent works on the formation of a variety of lead-semiconductor Schottky barriers we emphasize the fact that in many cases lead appears as a "prototype" metal forming unreacted, very sharp interfaces with many different semiconductors. We add also new experimental evidence, mostly derived from synchrotron radiation core level and valence band spectroscopy based on lead-silicon interfaces. © 1989.

引用

页码：25 / 37

页数：13

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