SCHOTTKY BARRIERS - MODELS AND TESTS

[1] PHOTOEMISSION INVESTIGATION OF THE TEMPERATURE EFFECT ON SI-AU INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 930 - 935

[2] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[3] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1423 - 1426

[4] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59

[5] ANGULAR-DEPENDENCE OF X-RAY-PHOTOEMITTED VALENCE-ELECTRON SPECTRA FROM SINGLE-CRYSTAL GOLD [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (02) : 111 - 114

[6] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[7] DISSOCIATIVE SURFACE-REACTIONS AT SCHOTTKY AND HETEROJUNCTION INTERFACES WITH ALAS AND GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 674 - 680

[8] BRILLSON LJ, 1978, J VAC SCI TECHNOL, V15, P1378, DOI 10.1116/1.569792

[9] REACTIVE INTER-DIFFUSION AND ELECTRONIC BARRIERS AT METAL-CDS AND METAL-CDSE INTERFACES - CONTROL OF SCHOTTKY-BARRIER HEIGHT USING REACTIVE INTERLAYERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 617 - 622

[10] BRUCKER CF, COMMUNICATION

[1] PHOTOEMISSION INVESTIGATION OF THE TEMPERATURE EFFECT ON SI-AU INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 930 - 935

[2] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[3] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1423 - 1426

[4] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59

[5] ANGULAR-DEPENDENCE OF X-RAY-PHOTOEMITTED VALENCE-ELECTRON SPECTRA FROM SINGLE-CRYSTAL GOLD [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (02) : 111 - 114

[6] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[7] DISSOCIATIVE SURFACE-REACTIONS AT SCHOTTKY AND HETEROJUNCTION INTERFACES WITH ALAS AND GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 674 - 680

[8] BRILLSON LJ, 1978, J VAC SCI TECHNOL, V15, P1378, DOI 10.1116/1.569792

[9] REACTIVE INTER-DIFFUSION AND ELECTRONIC BARRIERS AT METAL-CDS AND METAL-CDSE INTERFACES - CONTROL OF SCHOTTKY-BARRIER HEIGHT USING REACTIVE INTERLAYERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 617 - 622

[10] BRUCKER CF, COMMUNICATION