ALUMINUM-SILICON OHMIC CONTACT ON SHALLOW N+-P JUNCTIONS

被引：40

作者：

FINETTI, M

OSTOJA, P

SOLMI, S

SONCINI, G

机构：

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 03期

关键词：

D O I：

10.1016/0038-1101(80)90011-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：255 / &

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