HOT-CARRIER EFFECTS IN HIGH MAGNETIC-FIELDS IN SILICON INVERSON LAYERS AT LOW-TEMPERATURES - P-CHANNEL

被引：28

作者：

HESS, K

ENGLERT, T

NEUGEBAUER, T

LANDWEHR, G

DORDA, G

机构：

[1] UNIV VIENNA,LUDWIG BOLTZMANN INST FESTKORPERPHYS,A-1090 VIENNA,AUSTRIA

[2] UNIV VIENNA,INST ANGEW PHYS,A-1090 VIENNA,AUSTRIA

[3] UNIV WURZBURG,INST PHYS,D-8700 WURZBURG,FED REP GER

[4] SIEMENS AG,FORSCH LAB,MUNICH,FED REP GER

来源：

PHYSICAL REVIEW B | 1977年 / 16卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.16.3652

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3652 / 3659

页数：8

共 29 条

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