UNIFIED FIELD-EFFECT TRANSISTOR-THEORY INCLUDING VELOCITY SATURATION

[1] CHARACTERISTICS OF JUNCTION-GATE FIELD EFFECT TRANSISTOR WITH SHORT CHANNEL LENGTH [J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1307 - &

[2] DANG LM, 1979, IEEE T ELECTRON DEV, V26, P436

[3] 1 MU-M MOSFET VLSI TECHNOLOGY .2. DEVICE DESIGNS AND CHARACTERISTICS FOR HIGH-PERFORMANCE LOGIC APPLICATIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 247 - 255

[4] FOSS RC, 1979, 5TH DIG EUR SOL STAT, P18

[5] MODEL AND PERFORMANCE OF HOT-ELECTRON MOS-TRANSISTORS FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 513 - 520

[6] CARRIER MOBILITY AND CURRENT SATURATION IN MOS TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) : 129 - +

[7] CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 213 - 220

[8] KLASSEN FM, 1977, PROCESS DESIGN MODEL

[9] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1415 - &

[10] ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 681 - +

[1] CHARACTERISTICS OF JUNCTION-GATE FIELD EFFECT TRANSISTOR WITH SHORT CHANNEL LENGTH [J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1307 - &

[2] DANG LM, 1979, IEEE T ELECTRON DEV, V26, P436

[3] 1 MU-M MOSFET VLSI TECHNOLOGY .2. DEVICE DESIGNS AND CHARACTERISTICS FOR HIGH-PERFORMANCE LOGIC APPLICATIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 247 - 255

[4] FOSS RC, 1979, 5TH DIG EUR SOL STAT, P18

[5] MODEL AND PERFORMANCE OF HOT-ELECTRON MOS-TRANSISTORS FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 513 - 520

[6] CARRIER MOBILITY AND CURRENT SATURATION IN MOS TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) : 129 - +

[7] CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 213 - 220

[8] KLASSEN FM, 1977, PROCESS DESIGN MODEL

[9] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1415 - &

[10] ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 681 - +