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CHARACTERISTICS OF JUNCTION-GATE FIELD EFFECT TRANSISTOR WITH SHORT CHANNEL LENGTH

被引：4
作者：
CHIU, TL
GHOSH, HN
机构：
来源：
SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 12期
关键词：
D O I：
10.1016/0038-1101(71)90120-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1307 / &
相关论文
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