CURRENT SATURATION AND DRAIN CONDUCTANCE OF JUNCTION-GATE FIELD-EFFECT TRANSISTORS

被引：15

作者：

WU, SY

SAH, CT

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 06期

关键词：

D O I：

10.1016/0038-1101(67)90141-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：593 / &

共 10 条

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[3]

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[4] EFFECTS OF DIFFUSION CURRENT ON CHARACTERISTICS OF METAL-OXIDE (INSULATOR)-SEMICONDUCTOR TRANSISTORS [J].

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SOLID-STATE ELECTRONICS, 1966, 9 (10) :927-+

[5]

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[6] SOURCE TO DRAIN RESISTANCE BEYOND PINCH-OFF IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS (MOST) [J].

REDDI, VGK ;

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) :139-+

[7] EQUIVALENT CIRCUIT OF AN ARBITRARILY DOPED FIELD-EFFECT TRANSISTOR [J].

RICHER, I .

SOLID-STATE ELECTRONICS, 1965, 8 (04) :381-+

[8]

Sevin L.J., 1965, Field-effect transistors

[9] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376

[10] CURRENT SATURATION IN SILICON MULTICHANNEL FIELD-EFFECT TRANSISTORS [J].

ZULEEG, R .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12) :2111-&

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