SOURCE TO DRAIN RESISTANCE BEYOND PINCH-OFF IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS (MOST)

被引：50

作者：

REDDI, VGK

SAH, CT

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1965年 / ED12卷 / 03期

关键词：

D O I：

10.1109/T-ED.1965.15469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：139 / +

页数：1

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[J]. PHYSICAL REVIEW, 1953, 91 (03): : 518 - 527
[2] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
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DEAL, BE
SNOW, EH
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[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[3] PAO HC, TO BE PUBLISHED
[4] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 324 - +
[5] THEORY OF THE SPACE-CHARGE-LIMITED SURFACE-CHANNEL DIELECTRIC TRIODE
WRIGHT, GT
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 167 - 175